从2008到2013年韩根全博士在新加坡国立大学Silicon Nano Device Laboratory (SNDL) 实验室从事高端CMOS器件研制。韩博士在高迁移率非硅材料CMOS器件、隧穿晶体管以及负电容晶体管器件研制方面取得了国际领先的研究成果，相关研究成果被Semiconductor Today等网站多次转载。韩根全博士发表论文100多篇，在IEEE顶级会议International Electron Devices Meeting (IEDM) 和VLSI Symposium on Technology (VLSI) 上发表多篇文章。
演讲主题：Defect characterization for advanced logic and memory devices
纪志罡 副教授 英国利物浦约翰摩尔斯大学
He received the B. Eng. degree in Electrical Engineering from Tsinghua University in 2003, the M. Eng degree in Microelectronics from Peking University in 2006 and the Ph.D. degree in Microelectronics from Liverpool John Moores University in 2010. He has authored or co-authored over 60 journal and conference papers covering the research on the degradation phenomena and reliability assessment of SiO2, SiON, high-k, and multiple-gate devices and characterization of Ge/III-V and MIM devices. His current research interests focuses on characterization, modeling and design techniques for reliable, low-power, and high-performance systems, motivated by both evolutionary and revolutionary advances in nanoelectronics.
演讲主题：Defect Detection for Advanced Wafer and Package level devices using Scanning Acoustic Microscopy
BH Lee, Director of Sales, Taiwan, Sonix, Inc.
Master in MBA; Major in Electronics & Electrical Engineering
20 Years semiconductor industry experience
Design, yield improvement & process enhancement of wafers and packages
Background in automated test and inspection
Close collaboration with major IDM’s, Fabs and OSAT’s
James C.P. McKeon, Ph.D, Director or Technology, Sonix, Inc.
Ph.D. in Applied Science with a concentration in Nondestructive Evaluation (NDE) with primary focus being ultrasonic NDE
24 years ultrasonic inspection experience
During the past nineteen years, he has been working on Scanning Acoustic Microscopy hardware, software, and inspection techniques for microelectronic sample inspection. Inventor and holds 9 patents.
刘长泽 博士 华为海思半导体有限公司
Peking University in 2013. Then he joined the Quality and Reliability Team in Samsung Electronics, Korea, where he involved in the development of 14/10/7nm processes. In 2017 he joined the Design For Reliability team in Huawei Hisilicon. He has authored or coauthored over 30 scientific papers including IEEE IEDM, VLSI and IRPS. He also served as the committee member of IRPS, ISCAS as well as the reviewer of IEEE T-ED and EDL. His research interests now include the design for device, circuit and product level quality and reliability.
获中国专利授权30余项、美国专利授权10余项。相关成果被列入国际半导体技术路线指南(ITRS)。获2013年美国IEEE电子器件青年科学家奖 (IEEE EDS Early Career Award) ， 是首位来自非美国机构的获奖者；获2014年教育部自然科学一等奖 (个人排名第2)；获2015年国家自然基金委优秀青年基金。任Nature旗下期刊Scientific Reports编委、《中国科学：信息科学》栏目编委；任IEEE IRPS等国际学术会议TPC委员。
演讲主题：High-performance two-dimensional electronic devices and characterization
吴燕庆 教授 华中科技大学
Yanqing Wu is currently a Professor at the Huazhong University of Science and Technology Wuhan, Hubei, China. His research interests include graphene nanoelectronics; electronic devices on novel two-dimensional materials such as MoS2 and black phosphorus; high-frequency devices and circuits as well as high-power devices; He has published more than 80 papers in international journals and conferences.